Thermal / Diffusion (Furnace)
Oxides
- Grown SiO2 using wet, dry, dry/wet/dry, DCE processes to achieve thicknesses from 30 - 5500A at temperature ranges of 700C - 1100C
Anneals
- Gasses available - N2, O2, Forming Gas (N2:H2 up to 10%), H2
- Temperature range - 100 - 1100C
- Time Range - 10 min - 4 hours
Rapid Thermal Processing
Oxides
- Grown SiO2 using dry processing to achieve SiO2 thicknesses of 10 - 150A
Nitrides
- Grown SiN to a self limiting thickness of 25A
- CVD SiN Thickness - 100 - 1000A
Anneals
- Gases available - O2, N2, NH3, NO, N2O
- Temperature range - 500 - 1100C
- Time range - Spike to 120 seconds
Hi-K Deposition
- ALD HfO2 in a thickness range of 10 - 30A
Silicon Deposition / Growth
Poly & Amorphous Si Deposition
- Poly - Single wafer, Temperature - 720C, Thicknesses 300 - 1500A
- a-Si - Single wafer, Temperature - 550C, Thicknesses 200 - 1000A
Epitaxial Si Growth
- Si - Thicknesses 10 - 500A
- SiGe - 25% Ge - Thicknesses 20 - 500A
