Line/Space Gate with Spacer Etch Process

  • Polysilicon or a-Silicon Etch
    • non-Hard Mask
      • 1000,1200 or 1500A Polysilicon
      • 20A Thermal Oxide
  • Hard mask
    • 300 or 400A PECVD Oxide or RTCVD Nitride
      • 1000, 1200 or 1500A a-Silicon
      • 100A PVD TiN
      • 20, 25 or 30A HfOx

Polysilicon

Polysilicon

Silicon Substrate

 

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