Professional Background

• Ph.D. (Physics of Semiconductor and Dielectric), Ioffe Physical-Technical Institute, St. Petersburg, Russia 2000
• M.S. (Optoelectronic Devices), Leningrad Electrical Engineering Institute, Russia 1987

Research Areas

• Optoelectronics
• Molecular beam epitaxy and nanotechnology

Description of Research

• Molecular beam epitaxy (MBE) growth development for fabrication of AlGaAs/GaAs and InGaAs/AlGaAs heterostructures using different systems (CNA-4, RIBER EPINEAT, EPI - Mod Gen II). Experimental investigation of growth kinetics on vicinal surfaces.
• Analysis of reliability of high power laser diodes. Investigation of dependence of reliability of high power laser diodes on crystal perfection by high resolution X-ray diffraction.
• Optoelectronic semiconductor structures with quantum confinement. Photoluminescence study of heterostructures with ultra-thin layers. Fabricating of various quantum confined structures, such as superlattices, quantum dots (QDs), coupled quantum well - dots, using MBE. Fabrication of high density and high uniformity multi sheet arrays of InAs/GaAs QDs
• Design, fabrication, and characterization of laser diodes, vertical cavity surface-emitting lasers (VCSELs), light emitted diodes (LEDs), photodetectors with superior performance parameters.

Selected publications

S. Oktyabrsky, A. Katsnelson, V. Tokranov, R. Todt, and M. Yakimov
Oxidation Lift-off Method for Layer Transfer of GaAs/AlAs-based structures
Appl. Phys. Lett. , July 5, 2004

A.M. Mintairov, K. Sun, J. L. Merz, C. Li, A.S. Vlasov, D.A. Vinokurov, O.V. Kovalenkov, V. Tokranov, and S. Oktyabrsky
Nanoindentation and near-field spectroscopy of single semiconductor quantum dots
Phys. Rev. B 69, 155306 (2004)

M. Lamberti, A. Katsnelson, M. Yakimov, G. Agnello, V. Tokranov, and S. Oktyabrsky
Room-Temperature Defect Tolerance of Shape Engineered Quantum Dot Structures
MRS Proc., 2004 (in press)

Alex Katsnelson, Vadim Tokranov, Michael Yakimov, and Serge Oktyabrsky
Integration of III-V Optoelectronic Components on Si Platform
MRS Proc., 2004 (in press)

V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, G. Agnello and S. Oktyabrsky
Nanoengineered Quantum Dot Active Medium for Thermally-Stable Laser Diodes
MRS Proc., 2004 (in press)

V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, G. Angello and S. Oktyabrsky
Nanoengineered InAs Quantum Dot Active Medium for Laser Diodes
Proc. SPIE. 2004 (in press)

V. Tokranov, M. Yakimov, A. Katsnelson, K. Dovidenko, M. Lamberti, and S. Oktyabrsky
Nanoengineered InAs Quantum Dots with Stabilized Electronic Properties
in Quantum Confined Semiconductor Nanostructures
MRS Proc., v. 737 (2003) 185-200

V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, and S. Oktyabrsky
Shape Engineered InAs Quantum Dots with Stabilized Electronic Properties
Proceedings of SPIE, v. 4999, (2003)

V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, and S. Oktyabrsky
Enhanced Thermal Stability of Laser Diodes with Shape-Engineered Quantum Dot Medium
Appl. Phys. Lett., v. 83(5), 833-835 (2003)

A. Katsnelson, V. Tokranov, M. Yakimov, M. Lamberti, and S. Oktyabrsky
Hybrid Integration of III-V Optoelectronic Devices on Si Platform Using BCB
Proc. SPIE, 4997 (2003), 198-205

M. Lamberti, V. Tokranov, R. Moore, M. Yakimov, A. Katsnelson, and S. Oktyabrsky
Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures
in: Progress in Semiconductors II - Electronic and Optoelectronic Applications, MRS Proc., 744, (2003) 369-374

A.Katsnelson, V. Tokranov, M. Yakimov, M. Lamberti, and S. Oktyabrsky
Hybrid Integration of III-V Optoelectronic Devices on Si Platform Using BCB
in Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines
MRS Proc., 741 (2003) J5.15.1-6

A.M. Mintairov, P.A. Blagnov, O.V. Kovalenkov, C. Li, J.L. Merz, S. Oktyabrsky, K. Sun, V. Tokranov, A.S. Vlasov, D.A. Vinokurov
Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots
in Quantum Confined Semiconductor Nanostructures, MRS Proc., v. 737 (2003) 59-64

R. Todt, K. Dovidenko, A. Katsnelson, V. Tokranov, M. Yakimov, and S. Oktyabrsky
Oxidation Kinetics and Microstructure of Wet-Oxidized MBE-Grown Short-Period AlGaAs
In: Progress in Semiconductor Materials for Optoelectronic Applications. Mater. Res. Soc. Proc., 692 (2002) 561-6

V. Tokranov, M. Yakimov, A. Katsnelson, K. Dovidenko, R. Todt, and S. Oktyabrsky
InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes
In: Progress in Semiconductor Materials for Optoelectronic Applications. Mater. Res. Soc. Proc., 692 (2002), 135-140

M. Yakimov, K. Dovidenko, V. Tokranov, A. Katsnelson and S. Oktyabrsky
InAs Quantum Dots Formation, Evolution and Evaporation on GaAs and AlAs Surfaces
In: Current Issues in Heteroepitaxial Growth - Stress Relaxation and Self-Assembly. Mater. Res. Soc. Proc., 696 (2002)

Vadim Tokranov, Michael Yakimov, Alex Katsnelson, Katharine Dovidenko, Rene Todt, and Serge Oktyabrsky
InAs Quantum Dot Laser Diodes: Structure, Characteristics and Temperature Dependence
Proc. SPIE, 4656 (2002), 79-88

S. Oktyabrsky, V. Tokranov, M. Yakimov, A. Katsnelson, and K. Dovidenko
Vertical Stacks of InAs Quantum Dots Embedded Into Short-Period AlAs/GaAs Superlattice
In: Mater. Res. Soc. Symp. Proc., Vol. 642, pp. J3.30-J3.32, (2001)

S. Martini, A.A. Quivy, D. Ugarte, C. Lange, W. Richter, V. Tokranov
Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs (001) vicinal surfaces
J. Cryst. Growth, 227-228, pp.46-50, (2001)